SIGC81T120R2C Datasheet | Infineon

.. IGBT Chip in NPT-technology Features : - 1200V NPT technology 200µm chip - low turn-off losses - positive temperature coefficient - easy paralleling - integrated gate resistor This chip is used for: - power module BSM 50GD120DN2 Applications: - drives Chip Type SIGC81T120R2C VCE 1200V ICn 50A Die Size 9.08 X 8.98 mm2 Package sawn on foil Ordering Code Q67041A4701-A003 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Remended Storage...