Datasheet4U Logo Datasheet4U.com

SIGC81T120R2C - IGBT

Description

AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2002 All Rights

Features

  • 1200V NPT technology 200µm chip.
  • low turn-off losses.
  • positive temperature coefficient.
  • easy paralleling.
  • integrated gate resistor This chip is used for:.
  • power module BSM 50GD120DN2.

📥 Download Datasheet

Datasheet preview – SIGC81T120R2C

Datasheet Details

Part number SIGC81T120R2C
Manufacturer Infineon Technologies
File Size 95.99 KB
Description IGBT
Datasheet download datasheet SIGC81T120R2C Datasheet
Additional preview pages of the SIGC81T120R2C datasheet.

📁 Similar Datasheet

Other Datasheets by Infineon Technologies

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com SIGC81T120R2C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 200µm chip • low turn-off losses • positive temperature coefficient • easy paralleling • integrated gate resistor This chip is used for: • power module BSM 50GD120DN2 Applications: • drives C G E Chip Type SIGC81T120R2C VCE 1200V ICn 50A Die Size 9.08 X 8.98 mm2 Package sawn on foil Ordering Code Q67041A4701-A003 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 9.08 X 8.98 8 x ( 2.6 x 1.78 ) 1.46 x 0.8 81.5 / 63.
Published: |