SKW07N120 Datasheet | Infineon

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode - Lower Eoff pared to previous generation - Short circuit withstand time - 10 s - Designed for: - Motor controls - Inverter - SMPS - NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability - Qualified according to JEDEC1 for target applications PG-TO-247-3 - Pb-free lead plating; Ro HS pliant - plete product spectrum and PSpice Models : http://.infineon./igbt/ Type SKW07N120 VCE 1200V IC 8A Eoff 0.7m J Tj Marking Package 150C K07N120 PG-TO-247-3 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE  1200V, Tj  150C Diode forward current TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter...