Full PDF Text Transcription for SKW20N60HS (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
SKW20N60HS. For precise diagrams, tables, and layout, please refer to the original PDF.
View original datasheet text
SKW20N60HS
^
High Speed IGBT in NPT-technology
C
• 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution • • • • High ruggedness, temperature stable behaviour Pb-free lead plating; RoHS compliant 1 Qualified according to JEDEC for target applications Complete product spectrum and PSpice Models : http://www.infineon.
SKW20N60HS Datasheet
