SKW25N120
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Em Con diode
- 40lower Eoff pared to previous generation
- Short circuit withstand time
- 10 µs
- Designed for:
- Motor controls
- Inverter G
- SMPS
- NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
- Pb-free lead plating; Ro HS pliant 1
- Qualified according to JEDEC for target applications
- plete product spectrum and PSpice Models : http://.infineon./igbt/ Type SKW25N120 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature, wavesoldering, 1.6mm (0.063 in.)...
