SKW30N60HS
High Speed IGBT in NPT-technology
- 30% lower Eoff pared to previous generation
- Short circuit withstand time
- 10 µs
- Designed for operation above 30 k Hz
- NPT-Technology for 600V applications offers:
- parallel switching capability
- moderate Eoff increase with temperature
- very tight parameter distribution
- High ruggedness, temperature stable behaviour
- Pb-free lead plating; Ro HS pliant
- Qualified according to JEDEC1 for target applications
- plete product spectrum and PSpice Models : http://.infineon./igbt/
PG-TO-247-3
Type
Eoff Tj Marking
Package
600V 30 480µJ 150°C K30N60HS PG-TO-247-3
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage static transient (tp<1µs,...
