SPB02N60S5
SPB02N60S5 is Cool MOS Power Transistor manufactured by Infineon.
Cool MOS™ Power Transistor
Feature
- New revolutionary high voltage technology
- Ultra low gate charge
- Periodic avalanche rated
- Extreme dv/dt rated
- Ultra low effective capacitances
- Improved transconductance
VDS RDS(on)
600 V
Ω
1.8 A
PG-TO263
Type SPB02N60S5
Package PG-TO263
Ordering Code Q67040-S4212
Marking 02N60S5
Maximum Ratings
Parameter
Symbol
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
ID puls
Avalanche energy, single pulse
ID = 1.35 A, VDD = 50 V
Avalanche energy, repetitive tAR limited by Tjmax1) EAR
ID = 1.8 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax...
