SPB03N60S5
SPB03N60S5 is Power Transistor manufactured by Infineon.
Feature
- New revolutionary high voltage technology
- Ultra low gate charge
- Periodic avalanche rated
- Extreme dv/dt rated
- Ultra low effective capacitances
- Improved transconductance
VDS RDS(on)
600 V 1.4 Ω 3.2 A
PG-TO263
Type SPB03N60S5
Package PG-TO263
Ordering Code Q67040-S4197
Marking 03N60S5
Maximum Ratings
Parameter
Symbol
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
ID puls
Avalanche energy, single pulse
ID = 2.4 A, VDD = 50 V
Avalanche energy, repetitive t AR limited by Tjmax1) EAR
ID = 3.2 A, VDD = 50 V
Avalanche current, repetitive t AR limited by Tjmax IAR
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Ptot
Operating and storage temperature
Tj , Tstg
Value
Unit...
