SPB07N60C2
SPB07N60C2 is Cool MOS Power Transistor manufactured by Infineon.
Feature
- New revolutionary high voltage technology
- Ultra low gate charge
- Periodic avalanche rated
- Extreme dv/dt rated
- Ultra low effective capacitances
P-TO220-3-31
Product Summary VDS @ Tjmax 650 R DS(on) ID
P-TO263-3-2
V Ω A
0.6 7.3
P-TO220-3-1
1 P-TO220-3-31
Type SPP07N60C2 SPB07N60C2 SPA07N60C2
Package P-TO220-3-1 P-TO263-3-2
Ordering Code Q67040-S4309 Q67040-S4310
Marking 07N60C2 07N60C2 07N60C2
P-TO220-3-31 Q67040-S4331
Maximum Ratings Parameter Symbol ID Value SPP_B SPA Unit
Continuous drain current
TC = 25 °C TC = 100 °C
A 7.3 4.6 7.31) 4.61) 14.6 230 0.5 7.3 6 ±20
±30
Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse
ID =5.5A, VDD =50V
ID puls EAS EAR IAR
14.6 230 0.5 7.3 6 ±20
±30
A m J
Avalanche energy, repetitive t AR limited by Tjmax 2)
ID =7.3A, VDD =50V
Avalanche current, repetitive t AR limited by Tjmax Reverse diode dv/dt
IS = 7.3 A, VDS < VDD , di/dt=100A/µs, Tjmax =150°C
A V/ns V W dv/dt
VGS VGS Ptot
Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC =...