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Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance
SPB12N50C3
VDS @ Tjmax 560 V
RDS(on)
0.38 Ω
ID
11.6 A
PG-TO263
-
Type SPB12N50C3
Package PG-TO263
Ordering Code Q67040-S4641
Marking 12N50C3
Maximum Ratings Parameter
Symbol
Continuous drain current
TC = 25 °C TC = 100 °C
Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse
ID=5.5A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=11.
SPB12N50C3 Datasheet
