SPB12N50C3
SPB12N50C3 is Power Transistor manufactured by Infineon.
Cool MOS™ Power Transistor
Feature
- New revolutionary high voltage technology
- Ultra low gate charge
- Periodic avalanche rated
- Extreme dv/dt rated
- Ultra low effective capacitances
- Improved transconductance
VDS @ Tjmax 560 V
RDS(on)
0.38 Ω
11.6 A
PG-TO263
- Type SPB12N50C3
Package PG-TO263
Ordering Code Q67040-S4641
Marking 12N50C3
Maximum Ratings Parameter
Symbol
Continuous drain current
TC = 25 °C TC = 100 °C
Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse
ID=5.5A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=11.6A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax Gate source voltage
Gate source...
