SPB160N04S2L-03 Overview
SPB160N04S2L-03 OptiMOS® Power-Transistor • N-Channel Product Summary VDS RDS(on) max. SMD version ID 40 2.7 160 ID=80A, V DD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt IS=160A, VDS=32V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation