SPB16N50C3 Overview
Cool MOS™ Power Transistor TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse Avalanche energy, repetitive tAR limited by Tjmax2) Avalanche current, repetitive tAR limited by Tjmax Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature Reverse diode dv/dt 6) ID IAR VGS VGS Ptot Tj , Tstg dv/dt Value SPB
