The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology
• Worldwide best RDS(on) in TO-251 and TO-252
• Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance
SPU07N60S5 SPD07N60S5
VDS RDS(on)
ID
PG-TO252
600 V 0.6 Ω 7.3 A
PG-TO251
2
3 1
3 2 1
Type SPU07N60S5 SPD07N60S5
Package PG-TO251 PG-TO252
Ordering Code Q67040-S4196 Q67040-S4186
Marking 07N60S5 07N60S5
Maximum Ratings
Parameter
Symbol
Continuous drain current
ID
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
ID puls
Avalanche energy, single pulse
EAS
ID = - A, VDD = 50 V
Avalanche energy, repetitive tAR limited by Tjmax1) EAR
ID = 7.
SPD07N60S5 Datasheet
