SPD07N60S5
SPD07N60S5 is Power Transistor manufactured by Infineon.
Feature
- New revolutionary high voltage technology
- Worldwide best RDS(on) in TO-251 and TO-252
- Ultra low gate charge
- Periodic avalanche rated
- Extreme dv/dt rated
- Ultra low effective capacitances
- Improved transconductance
SPU07N60S5 SPD07N60S5
VDS RDS(on)
PG-TO252
600 V 0.6 Ω 7.3 A
PG-TO251
3 1
3 2 1
Type SPU07N60S5 SPD07N60S5
Package PG-TO251 PG-TO252
Ordering Code Q67040-S4196 Q67040-S4186
Marking 07N60S5 07N60S5
Maximum Ratings
Parameter
Symbol
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
ID puls
Avalanche energy, single pulse
ID =
- A, VDD = 50 V
Avalanche energy, repetitive t AR limited by Tjmax1) EAR
ID = 7.3 A, VDD = 50 V
Avalanche current, repetitive t AR limited by Tjmax IAR
Gate source voltage
Gate source voltage AC (f...
