SPD08P06P
Features
- Product Summary Drain source voltage Drain-source on-state resistance Continuous drain current
P-Channel Enhancement mode Avalanche rated dv/dt rated 175°C operating temperature
VDS RDS(on) ID
-60 0.3 -8.8
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Type SPD08P06P SPU08P06P
Package P-TO252
Ordering Code Q67040-S4153
Pin 1 G
PIN 2/4 D
PIN 3 S
P-TO251-3-1 Q67040-S4154
Maximum Ratings,at T j = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current
Value -8.8 -6.2
Unit A
T C = 25 °C T C = 100 °C
Pulsed drain current
ID puls EAS EAR dv/dt
-35.2 70 4.2 6 k V/µs m J
T C = 25 °C
Avalanche energy, single pulse
I D = -8.8 A , VDD = -25 V, R GS = 25 W
Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt
I S = -8.8 A, V DS = -48 , di/dt = 200 A/µs, T jmax = 175 °C
Gate source voltage Power dissipation
VGS Ptot Tj , Tstg
±20 42 -55...+175 55/175/56
V W °C
T C = 25 °C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
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