SPD09P06PL
Feature
SIPMOS =Power-Transistor
P-Channel Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv/dt rated
-60 0.25 -9.7
P-TO252
Drain pin 2
Type SPD09P06PL SPU09P06PL
Package P-TO252 P-TO251-3-1
Ordering Code Q67042-S4007 Q67042-S4020
Gate pin1 Source pin 3
Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current
TC=25°C TC=100°C
Symbol ID
Value -9.7 -6.8
Unit A
Pulsed drain current
TC=25°C
ID puls EAS EAR dv/dt VGS Ptot Tj , Tstg
-38.8 70 4.2 6 ±20 42 -55... +175 55/175/56 k V/µs V W °C m J
Avalanche energy, single pulse
ID =-9.7 A , VDD =-25V, RGS =25
Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt
IS =-9.7A, VDS =-48, di/dt=200A/µs, Tjmax =175°C
Gate source voltage Power dissipation
TC=25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Page 1
2001-07-02
Final data Thermal Characteristics Parameter Characteristics Thermal resistance, junction
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