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SPD10N10 - SIPMOS Power Transistor

Key Features

  • N channel.
  • SPD 10N10 Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 100 0.2 10 V Ω A Enhancement mode.
  • Avalanche rated.
  • dv/dt rated Type SPD10N10 SPU10N10 Package P-TO252 P-TO251 Ordering Code Packaging Pin 1 G Pin 2 Pin 3 D S Q67040-S4119-A2 Tape and Reel Q67040-S4111-A2 Tube Maximum Ratings, at Tj = 25 ˚C, unless otherwise specified Parameter Continuous drain current Symbol Value.

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Datasheet Details

Part number SPD10N10
Manufacturer Infineon
File Size 125.16 KB
Description SIPMOS Power Transistor
Datasheet download datasheet SPD10N10 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Data SIPMOS® Power Transistor Features • N channel • SPD 10N10 Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 100 0.2 10 V Ω A Enhancement mode • Avalanche rated • dv/dt rated Type SPD10N10 SPU10N10 Package P-TO252 P-TO251 Ordering Code Packaging Pin 1 G Pin 2 Pin 3 D S Q67040-S4119-A2 Tape and Reel Q67040-S4111-A2 Tube Maximum Ratings, at Tj = 25 ˚C, unless otherwise specified Parameter Continuous drain current Symbol Value 10 6.3 40 59 4 6 ±20 40 -55...