SPD10N10 Description
Preliminary Data SIPMOS® Power Transistor.
SPD10N10 Key Features
- N channel
- SPD 10N10
- Avalanche rated
- dv/dt rated
- case Thermal resistance, junction
- ambient, leded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area1) Symbol min. Values typ. max. 3.1 100
- VDS≥2-ID-RDS(on)max , ID = 6 A
- VDD = 80 V