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SPP07N60S5, SPB07N60S5 SPI07N60S5 Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance
P-TO220-3-1
VDS RDS(on) ID
P-TO262 P-TO263-3-2
600 0.6 7.3
V Ω A
P-TO220-3-1
2
1
23
Type
Package
Ordering Code
SPP07N60S5 SPB07N60S5 SPI07N60S5
Maximum Ratings Parameter
P-TO220-3-1 P-TO263-3-2 P-TO262
Q67040-S4172 Q67040-S4185 Q67040-S4328
Marking 07N60S5
07N60S5 07N60S5
Symbol ID
Value
Unit
Continuous drain current
TC = 25 °C TC = 100 °C
A 7.3 4.6
Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse
I D = - A, V DD = 50 V
I D puls EAS
14.6 230 0.5 7.