SPN03N60C3
SPN03N60C3 is Cool MOS Power Transistor manufactured by Infineon.
Feature
- New revolutionary high voltage technology
- Ultra low gate charge
- Extreme dv/dt rated
- Ultra low effective capacitances
V Ω A
3 2 1
VPS05163
Type
Package
Ordering Code
SOT-223
Q67040S4552
Marking 03N60C3
Maximum Ratings Parameter Continuous drain current TA = 25 °C TA = 70 °C Pulsed drain current, tp limited by Tjmax TA = 25 °C Gate source voltage static Gate source voltage AC (f >1Hz)
Power dissipation, TA = 25°C
Symbol ID
Value 0.7 0.4
Unit A
ID puls
3 3.2 ±20 ±30 1.8 -55... +150 W °C V
Avalanche current, repetitive t AR limited by Tjmax IAR VGS VGS Ptot Tj , Tstg
Operating and storage temperature
Page 1
2004-03-01
Rev. 2.0
Maximum Ratings Parameter Drain Source voltage slope
V DS = 480 V, ID = 3.2 A, Tj = 125 °C
Symbol dv/dt
Value 50
Unit V/ns
Thermal Characteristics Parameter Thermal resistance, junction
- soldering point SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1)
Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25m A Drain-Source avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) IDSS
ID=135µΑ, VGS=V DS VDS=600V, VGS=0V, Tj=25°C, Tj=150°C
Symbol min. Rth JS Rth JA
- Values typ. 25 110 max. 70
Unit K/W
Values typ. 700 3 0.5 1.26 3.8 10 max. 3.9 600 2.1
- Unit...
