SPP06N80C2 Datasheet | Infineon

Feature - - - - - - C O OLMOS Power Semiconductors New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved noise immunity Product Summary VDS RDS(on) ID 800 900 6 P-TO220-3-1 V m W A Type SPP06N80C2 Package P-TO220-3-1 Ordering Code Q67040-S4351 Marking SPP06N80C2 Maximum Ratings, at T j = 25 °C, unless otherwise specified Parameter Continuous drain current TC = 25 °C TC = 100 °C Symbol Value 6 3.8 18 230 0.2 6 6 ±20 83 -55... +150 Unit A Pulsed drain current, tp limited by T jmax Avalanche energy, single pulse ID=1.5A, V DD=50V ID puls EAS EAR IAR dv/dt m J Avalanche energy, repetitive t AR limited by Tjmax1) ID=6A, V DD=50V Avalanche current, repetitive t AR limited by Tjmax Reverse diode dv/dt IS=6A, VDS < VDD, di/dt=100A/µs, T jmax=150°C A V/ns V W °C Gate source voltage Power dissipation TC = 25 °C VGS Ptot Tj , Tstg Page 1 Operating and storage temperature 2000-05-29 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded Linear derating factor Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics , at T j = 25 °C, unless otherwise specified Static Characteristics Drain-source breakdown...