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SPP24N60C3 - Power Transistor

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Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance SPP24N60C3 VDS @ Tjmax 650 V RDS(on) 0.16 Ω ID 24.3 A PG-TO220-3-1 Type SPP24N60C3 Package Ordering Code PG-TO220-3-1 Q67040-S4639 Marking 24N60C3 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax ID puls Avalanche energy, single pulse EAS ID = 10 A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR ID = 24.