SPP30N03
SPP30N03 is SIPMOS Power Transistor manufactured by Infineon.
Features
- N channel
- Enhancement mode
- Avalanche rated
Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current
- dv/dt rated
- 175˚C operating temperature
..
VDS RDS(on) ID
30 0.023
V Ω A
Type SPP30N03 SPB30N03
Package Ordering Code Packaging P-TO220-3-1 Q67040-S4736-A2 Tube P-TO263-3-2 Q67040-S4736-A3 Tape and Reel
Pin 1 Pin 2 Pin 3 GDS
Maximum Ratings, at Tj = 25 ˚C, unless otherwise specified
Parameter
Symbol
Continuous drain current TC = 25 ˚C, 1) TC = 100 ˚C
Pulsed drain current
IDpulse
TC = 25 ˚C
Avalanche energy, single pulse ID = 30 A, VDD = 25 V, RGS = 25 Ω
Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt
EAR dv/dt
IS = 30 A, VDS = 24 V, di/dt = 200 A/µs, Tjmax = 175 ˚C
Gate source voltage Power dissipation TC = 25 ˚C
VGS Ptot
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Tj , Tstg
Data Sheet
Value
30 30 120
7.5 6
±20 75
-55... +175...
