SPS01N60C3 Datasheet | Infineon

Feature - New revolutionary high voltage technology - Ultra low gate charge - Periodic avalanche rated - Extreme dv/dt rated - Ultra low effective capacitances - Improved transconductance VDS @ Tjmax RDS(on) ID 650 6 0.8 V Ω A PG-TO251-3-11 Type SPS01N60C3 Package Ordering Code Marking 01N60C3 PG-TO251-3-11 - Maximum Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse I D = 0.6 A, VDD = 50 V Avalanche energy, repetitive t AR limited by Tjmax1) EAR I D = 0.8 A, VDD = 50 V Avalanche current, repetitive t AR limited by Tjmax I AR Gate source voltage static VGS Gate source voltage AC (f >1Hz) Power dissipation, T C = 25°C Symbol ID Value 0.8 0.5 Unit A I D puls EAS 1.6 20 0.01 0.8 ±20 ±30 11 -55... +150 15 W °C V/ns A V m J VGS Ptot T j , T stg dv/dt Operating and storage temperature Reverse diode dv/dt 3) Rev. 2.0 Page 1 2005-10-24 .. Maximum Ratings Parameter Drain Source voltage slope V DS = 480 V, I D = 0.8 A, Tj = 125 °C Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 2) Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.25m A Drain-Source avalanche V(BR)DS V GS=0V, ID=0.8A breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) I DSS ID=250µΑ, VGS=V DS V DS=600V, VGS=0V, Tj=25°C, Tj=150°C Symbol min. Rth JC Rth JA Rth JA Tsold - Values typ. max. 11 75 75 50...