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SPS01N60C3 Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance
VDS @ Tjmax RDS(on) ID
650 6 0.8
V Ω A
PG-TO251-3-11
Type SPS01N60C3
Package
Ordering Code
Marking 01N60C3
PG-TO251-3-11 -
Maximum Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse I D = 0.6 A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR I D = 0.8 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage static VGS Gate source voltage AC (f >1Hz)
Power dissipation, T C = 25°C
Symbol ID
Value 0.