SPU02N60S5
Feature
- New revolutionary high voltage technology
- Ultra low gate charge
- Periodic avalanche rated
- Extreme dv/dt rated
- Ultra low effective capacitances
- Improved transconductance
SPU02N60S5 SPD02N60S5
VDS RDS(on)
PG-TO252
600 V
Ω
1.8 A
PG-TO251
3 1
3 2 1
Type SPU02N60S5 SPD02N60S5
Package PG-TO251 PG-TO252
Ordering Code Q67040-S4226 Q67040-S4213
Marking 02N60S5 02N60S5
Maximum Ratings
Parameter
Symbol
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
ID puls
Avalanche energy, single pulse
ID = 1.35 A, VDD = 50 V
Avalanche energy, repetitive t AR limited by Tjmax1) EAR
ID = 1.8 A, VDD = 50 V
Avalanche current, repetitive t AR limited by Tjmax IAR
Gate source...
