SPU07N60C2
Feature
- New revolutionary high voltage technology
- Worldwide best R DS(on) in TO-251 and TO-252
- Ultra low gate charge
..
Product Summary VDS RDS(on) ID
P-TO251
600 0.6 7.3
P-TO252
V Ω A
- Periodic avalanche rated
- Extreme dv/dt rated
- Ultra low effective capacitances
- Improved noise immunity
Type SPD07N60C2 SPU07N60C2
Package P-TO252 P-TO251
Ordering Code Q67040-S4312 Q67040-S4311
Marking 07N60C2 07N60C2
Maximum Ratings, at TC = 25°C, unless otherwise specified Parameter Continuous drain current
TC = 25 °C TC = 100 °C
Symbol ID
Value 7.3 4.6
Unit A
Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse
ID =5.5A, VDD =50V
ID puls EAS EAR IAR dv/dt VGS Ptot Tj , Tstg
14.6 230 0.5 7.3 6 ±20 83 -55... +150 A V/ns V W °C m J
Avalanche energy, repetitive t AR limited by Tjmax 1)
ID =7.3A, VDD =50V
Avalanche current, repetitive t AR limited by Tjmax Reverse diode dv/dt
IS =7.3A, VDS < VDD , di/dt=100A/µs, Tjmax=150°C
Gate source voltage Power...
