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SPU08N05L - SIPMOS-R POWER TRANSISTOR

Datasheet Summary

Features

  • N channel.
  • Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 55 0.1 8.4 V Ω A Enhancement mode Level.
  • Avalanche rated www. DataSheet4U. com.
  • Logic.
  • dv/dt rated.
  • 175˚C operating temperature Type SPD08N05L SPU08N05L Package P-TO252 P-TO251 Ordering Code Q67040-S4134 Packaging Tape and Reel Pin 1 G Pin 2 D Pin 3 S Q67040-S4182-A2 Tube MaximumRatings , at Tj = 25 ˚C, unles.

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Datasheet Details

Part number SPU08N05L
Manufacturer Infineon Technologies
File Size 155.96 KB
Description SIPMOS-R POWER TRANSISTOR
Datasheet download datasheet SPU08N05L Datasheet
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SPD 08N05L SIPMOS® Power Transistor Features • N channel • Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 55 0.1 8.4 V Ω A Enhancement mode Level • Avalanche rated www.DataSheet4U.com • Logic • dv/dt rated • 175˚C operating temperature Type SPD08N05L SPU08N05L Package P-TO252 P-TO251 Ordering Code Q67040-S4134 Packaging Tape and Reel Pin 1 G Pin 2 D Pin 3 S Q67040-S4182-A2 Tube MaximumRatings , at Tj = 25 ˚C, unless otherwise specified Symbol Parameter Continuous drain current Value 8.4 5.9 34 35 2.4 6 Unit A ID TC = 25 ˚C TC = 100 ˚C Pulsed drain current IDpulse EAS EAR dv/dt TC = 25 ˚C Avalanche energy, single pulse mJ ID = 8.
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