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SPU08N10 - SIPMOS Power Transistor

Features

  • N channel.
  • SPD 08N10 Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 100 0.3 8.4 V Ω A Enhancement mode rated.
  • Avalanche rated www. DataSheet4U. com.
  • dv/dt Type SPD08N10 SPU08N10 Package P-TO252 P-TO251 Ordering Code Packaging Pin 1 G Pin 2 Pin 3 D S Q67040-S4126-A2 Tape and Reel Q67040-S4118-A2 Tube Maximum Ratings, at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Continuous.

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Datasheet Details

Part number SPU08N10
Manufacturer Infineon Technologies
File Size 159.24 KB
Description SIPMOS Power Transistor
Datasheet download datasheet SPU08N10 Datasheet
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Preliminary Data SIPMOS® Power Transistor Features • N channel • SPD 08N10 Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 100 0.3 8.4 V Ω A Enhancement mode rated • Avalanche rated www.DataSheet4U.com • dv/dt Type SPD08N10 SPU08N10 Package P-TO252 P-TO251 Ordering Code Packaging Pin 1 G Pin 2 Pin 3 D S Q67040-S4126-A2 Tape and Reel Q67040-S4118-A2 Tube Maximum Ratings, at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Continuous drain current Value 8.4 5.4 33.6 30 4 6 ±20 40 -55... +175 55/150/56 Unit A ID TC = 25 ˚C TC = 100 ˚C Pulsed drain current IDpulse EAS EAR dv/dt TC = 25 ˚C Avalanche energy, single pulse mJ ID = 8.
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