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SPU09N05 - SIPMOS PowerTransistor

Features

  • N channel.
  • Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 55 0.1 9.2 V Ω A Enhancement mode rated.
  • Avalanche rated www. DataSheet4U. com.
  • dv/dt.
  • 175˚C operating temperature Type SPD09N05 SPU09N05 Package P-TO252 P-TO251 Ordering Code Q67040-S4136 Packaging Tape and Reel Pin 1 G Pin 2 D Pin 3 S Q67040-S4130-A2 Tube MaximumRatings , at Tj = 25 ˚C, unless otherwise specified Pa.

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Datasheet Details

Part number SPU09N05
Manufacturer Infineon
File Size 156.36 KB
Description SIPMOS PowerTransistor
Datasheet download datasheet SPU09N05 Datasheet

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Full PDF Text Transcription

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SPD 09N05 SIPMOS® Power Transistor Features • N channel • Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 55 0.1 9.2 V Ω A Enhancement mode rated • Avalanche rated www.DataSheet4U.com • dv/dt • 175˚C operating temperature Type SPD09N05 SPU09N05 Package P-TO252 P-TO251 Ordering Code Q67040-S4136 Packaging Tape and Reel Pin 1 G Pin 2 D Pin 3 S Q67040-S4130-A2 Tube MaximumRatings , at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Continuous drain current Value 9.2 6.5 37 35 2.4 6 ±20 24 -55... +175 55/175/56 Unit A ID TC = 25 ˚C TC = 100 ˚C Pulsed drain current IDpulse EAS EAR dv/dt TC = 25 ˚C Avalanche energy, single pulse mJ ID = 9.
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