• Part: SPU28N03
  • Description: SIPMOS Power Transistor
  • Category: Transistor
  • Manufacturer: Infineon
  • Size: 142.89 KB
Download SPU28N03 Datasheet PDF
Infineon
SPU28N03
SPU28N03 is SIPMOS Power Transistor manufactured by Infineon.
Features - N channel - Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS ID 30 28 Enhancement mode RDS(on) 0.023 Ω - Avalanche rated - dv/dt rated - 175˚C operating temperature Type SPD28N03 SPU28N03 Package P-TO252 Ordering Code Q67040-S4138 Packaging Tape and Reel Pin 1 G Pin 2 Pin 3 D S P-TO251-3-1 Q67040-S4140-A2 Tube Maximum Ratings, at Tj = 25 ˚C, unless otherwise specified Parameter Continuous drain current Symbol Value 28 28 112 145 7.5 6 k V/µs m J Unit A TC = 25 ˚C, 1) TC = 100 ˚C Pulsed drain current IDpulse EAS EAR dv/dt TC = 25 ˚C Avalanche energy, single pulse ID = 28 A, VDD = 25 V, RGS = 25 Ω Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt IS = 28 A, VDS = 24 V, di/dt = 200 A/µs, Tjmax = 175 ˚C Gate source voltage Power dissipation VGS Ptot T j , Tstg ±20 75 -55... +175 55/175/56 V W ˚C TC = 25 ˚C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Data Sheet SPD 28N03 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance,...