SPW17N80C2
Feature
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C O OLMOS
Power Semiconductors
New revolutionary high voltage technology Worldwide best RDS(on) in TO 247 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances
Product Summary
VDS R DS(on) ID
800 290 17
P-TO247
V m W A
Type SPW17N80C2
Package P-TO247
Ordering Code Q67040-S4359
Marking SPW17N80C2
Maximum Ratings, at T j = 25 °C, unless otherwise specified Parameter Continuous drain current
TC = 25 °C TC = 100 °C
Symbol
Value 17 11 51 670 0.5 17 6 ±20 208 -55... +150
Unit A
Pulsed drain current, tp limited by T jmax Avalanche energy, single pulse
ID=4A, V DD=50V
ID puls EAS EAR IAR dv/dt m J
Avalanche energy, repetitive t AR limited by Tjmax1)
ID=17A, VDD=50V
Avalanche current, repetitive t AR limited by Tjmax w w
. u Gate source voltage 4 t e Power dissipation e h s a and storage temperature Operating t a d . w
TC = 25 °C
Reverse diode dv/dt
IS=17A, V DS < V DD, di/dt=100A/µs, T jmax=150°C m o...
