T458BPA
Description
: This 4 stage Ga As MMIC power amplifier is intended for use in radio link applications. It provides an output power of 23 d Bm at 1 d B gain pression. The device is fabricated with a 0.18 micron Pseudomorphic In Ga As/Al Ga As/Ga As High Electron Mobility Transistor processing technology.
7SH Chip T458B
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3DFNDJH Chip
Electrical Specifications: (VD = 5
- 6 V, ID = 300 m A)
Parameter Frequency Range P-1d B Gain Psat PAE Input Return Loss (incl. bond wire) Output Return Loss (incl. bond wire)
Min 17
Typ
Max 24
Unit GHz d Bm d B d Bm % d B d B
23 22 24 15 -6 -3
Infineon Technologies AG i. Gr. pg. 1/4
Preliminary data sheet 07.05.99
This is information on a product that is under development. Data and specificatios are subject to change without notice.
T458B_PA
0HDVXUHG GDWD (on chip measurements)
CCH250PW.SPW
Saturated Output Power Pout (d Bm)
18 12 14 16 18 20 22 24 26 28 30
Frequency f (GHz)
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