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T458BPA - 17 - 24 GHz GaAs Power Amplifier / Driver MMIC

Description

This 4 stage GaAs MMIC power amplifier is intended for use in radio link applications.

It provides an output power of 23 dBm at 1 dB gain compression.

The device is fabricated with a 0.18 micron Pseudomorphic InGaAs/AlGaAs/GaAs High Electron Mobility Transistor processing technology.

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Datasheet Details

Part number T458BPA
Manufacturer Infineon Technologies
File Size 72.23 KB
Description 17 - 24 GHz GaAs Power Amplifier / Driver MMIC
Datasheet download datasheet T458BPA Datasheet
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    T458B_PA 17 – 24 GHz GaAs Power Amplifier/Driver MMIC • • • • • • 4 Stage Monolithic Microwave Integrated Circuit (MMIC) Amplifier Input/Output matched (incl. bond wires) Frequency range: 17 GHz to 24 GHz High Isolation > 50 dB Gain > 22 dB P-1dB > 23 dBm, Psat > 24 dBm chip size: 4.2 mm x 1.8 mm ESD: Electrical discharge sensitive device, observe handling precautions! Description: This 4 stage GaAs MMIC power amplifier is intended for use in radio link applications. It provides an output power of 23 dBm at 1 dB gain compression. The device is fabricated with a 0.18 micron Pseudomorphic InGaAs/AlGaAs/GaAs High Electron Mobility Transistor processing technology.
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