007N06N
Features
- 100%avalanchetested
- Superiorthermalresistance
- N-channel
- Qualifiedaccordingto JEDEC1)fortargetapplications
- Pb-freeleadplating;Ro HSpliant
- Halogen-freeaccordingto IEC61249-2-21
Productvalidation
Qualifiedaccordingto JEDECStandard
Table1Key Performance Parameters
Parameter
Value
Unit
RDS(on),max
0.75 mΩ
Qoss
227 n C
QG(0V..10V)
216 n C
HSOF Tab
12345 678
Drain Tab
Gate Pin 1
Source Pin 2-8
Type/Ordering Code IPT007N06N
Package PG-HSOF-8
Marking 007N06N
Related Links
- 1) J-STD20 and JESD22
Final Data Sheet
Rev.2.3,2019-07-22
Opti MOSTMPower-Transistor,60V
IPT007N06N
Tableof Contents
Description
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