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BSC028N06LS3G
MOSFET
OptiMOSTM3Power-Transistor,60V
Features
•Idealforhighfrequencyswitchingandsync.rec. •OptimizedtechnologyforDC/DCconverters •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Superiorthermalresistance •N-channel,logiclevel •100%avalanchetested •Pb-freeplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplications •Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
60
V
RDS(on),max
2.8
mΩ
ID
174
A
SuperSO8
8 7 65
56 78
1 23 4
4321
S1
8D
S2
7D
S3
6D
G4
5D
Type/OrderingCode BSC028N06LS3 G
Package PG-TDSON-8
Marking 028N06LS
RelatedLinks -
1) J-STD20 and JESD22
Final Data Sheet
1
Rev.2.