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IPA030N10N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max ID
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
•Halogen-free accoridng to IEC61249-2-21
Type
IPA030N10N3 G
100 V 3 mW 79 A
Package Marking
PG-TO220-FP 030N10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
T C=25 °C2)
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS
I D=79 A, R GS=25 W
Gate source voltage
V GS
Power dissipa
030N10N Datasheet
