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042N10N - 100V MOSFET

General Description

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Key Features

  • N-channel, normal level.
  • Excellent gate charge x RDS(on) product (FOM).
  • Very low on-resistance RDS(on).
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IPB042N10N3G MOSFET OptiMOSª3Power-Transistor,100V Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchronousrectification •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max 4.2 mΩ ID 137 A D²PAK Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Type/OrderingCode IPB042N10N3 G Package PG-TO 263-3 Marking 042N10N RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.