• Part: 06N80C3
  • Description: Power Transistor
  • Category: Transistor
  • Manufacturer: Infineon
  • Size: 443.52 KB
Download 06N80C3 Datasheet PDF
Infineon
06N80C3
Features - New revolutionary high voltage technology - Extreme dv/dt rated - High peak current capability - Qualified according to JEDEC1) for target applications - Pb-free lead plating; Ro HS pliant - Ultra low gate charge - Ultra low effective capacitances Product Summary V DS R DS(on)max @ Tj = 25°C Q g,typ 800 0.9 31 V Ω n C PG-TO220-3 Cool MOSTM 800V designed for: - Industrial application with high DC bulk voltage - Switching Application ( i.e. active clamp forward ) Type SPP06N80C3 Package PG-TO220-3 Marking 06N80C3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t AR2),3) Avalanche current, repetitive t AR2),3) MOSFET dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V DS=0…640 V static AC (f >1 Hz) Power dissipation Operating and storage temperature Mounting torque Rev. 2.91 P tot...