072N10N
Features
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
Product Summary V DS R DS(on),max ID
- 175 °C operating temperature
- Pb-free lead plating; Ro HS pliant
- Qualified according to JEDEC1) for target application
- Ideal for high-frequency switching and synchronous rectification
Type
IPI072N10N3 G
IPP072N10N3 G
100 V 7.2 mΩ 80 A
Package Marking
PG-TO262-3 072N10N
PG-TO220-3 072N10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
T C=25 °C2)
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS
I D=80 A, R GS=25 Ω
Gate source voltage
V GS
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22 2) See figure 3
Value
Unit
160 m...
