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Type
OptiMOS™3 Power-Transistor
Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Avalanche rated • Pb-free plating
Type
IPD090N03L G E8177
IPD090N03L G E8177
Product Summary VDS RDS(on),max ID
30 V 9 mW 40 A
Package Marking
PG-TO252-3-11 090N03L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C
V GS=4.
090N03L Datasheet
