108N15N
108N15N is Power-Transistor manufactured by Infineon.
Features
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max (TO263) ID
150 V 10.8 m W 83 A
- 175 °C operating temperature
- Pb-free lead plating; Ro HS pliant; Halogen free
- Qualified according to JEDEC1) for target application
- Ideal for high-frequency switching and synchronous rectification
- Halogen-free according to IEC61249-2-21
Type
IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G
Package Marking
PG-TO263 108N15N
PG-TO220-3 111N15N
PG-TO262-3 111N15N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous drain current
T C=25 °C
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS
I D=83 A, R GS=25 W
Gate source voltage
V GS
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22 2) See figure 3
83 59 332 330 ±20 214 -55 ... 175 55/175/56
Unit A m J V W...
