111N15N - Power-Transistor

Datasheet Summary

Features

N-channel, normal level.
Excellent gate charge x R DS(on) product (FOM).
Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO263) ID 150 V 10.8 mW 83 A.
175 °C operating temperature.
Pb-free lead plating; RoHS compliant; Halogen free.
Qualified according to JEDEC1) for target.

Infineon

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Datasheet Details

Part number	111N15N
Manufacturer	Infineon
File Size	736.14 KB
Description	Power-Transistor
Datasheet	111N15N Datasheet
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Full PDF Text Transcription

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IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO263) ID 150 V 10.

Published: Sep 27, 2024 |