Datasheet Details
| Part number | 12M1H060 |
|---|---|
| Manufacturer | Infineon |
| File Size | 1.20 MB |
| Description | 1200V SiC Trench MOSFET |
| Datasheet |
 12M1H060 Datasheet
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Key Features
- Very low switching losses.
- Threshold-free on state characteristic.
- Benchmark gate threshold voltage, VGS(th) = 4.5V.
- 0V turn-off gate voltage for easy and simple gate drive.
- Fully controllable dV/dt.
- Robust body diode for hard commutation.
- Temperature independent turn-off switching losses.
- Sense pin for optimized switching performance Gate pin 4 Sense pin 3 Drain pin 1 Source pin 2 Benefits.
- Efficiency improvement.
- Enabling higher frequency.