12M2H008 - 1200V SiC MOSFET

Product Overview

Infineon

Datasheet Details

Part number	12M2H008
Manufacturer	Infineon
File Size	1.25 MB
Description	1200V SiC MOSFET
Datasheet	12M2H008 Datasheet
Additional preview pages of the 12M2H008 datasheet.

Product details

Description

Pin definition: Pin 1 - Gate Pin 2 - Kelvin sense contact Pin 3…7 - Source Tab - Drain Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction (only for 4pin, TO263-7L ) Type IMBG120R008M2H Package PG-TO263-7-U01 Marking 12M2H008 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.20 2024-07-01 IMBG120R008M2H CoolSiC™ 1200 V SiC MOSFET G2

Features

VDSS = 1200 V at Tvj = 25°C.
IDDC = 144 A at TC = 100°C.
RDS(on) = 7.7 mΩ at VGS = 18 V, Tvj = 25°C.
Very low switching losses.
Overload operation up to Tvj = 200°C.
Short circuit withstand time 2 µs.
Benchmark gate threshold voltage, VGS(th) = 4.2 V.
Robust against parasitic turn on, 0 V turn-off gate voltage can be applied.
Robust body diode for hard commutation.
. XT interconnection technology for b.

📁 Similar Datasheet

12MBI100VN-120-50 - IGBT Module (fuji electric)
12MBI100VN-120-50 - IGBT Module (Fuji Electric)
12MBI100VN-120-50 - Power Devices (IGBT) (ETC)
12MBI100VX-120-50 - IGBT Module (fuji electric)
12MBI100VX-120-50 - IGBT Module (Fuji Electric)
12MBI100VX-120-50 - Power Devices (IGBT) (ETC)
12MBI50VN-120-50 - IGBT Module (Fuji Electric)
12MBI50VN-120-50 - Power Devices (IGBT) (ETC)

Other Datasheets by Infineon

12M1H060 - 1200V SiC Trench MOSFET

Published: Jul 23, 2024 |