• Part: 170M1450
  • Description: Silicon Carbide MOSFET
  • Category: MOSFET
  • Manufacturer: Infineon
  • Size: 1.37 MB
Download 170M1450 Datasheet PDF
Infineon
170M1450
Features - VDSS = 1700 V at Tvj = 25°C - IDDC = 10 A at TC = 25°C - RDS(on) = 450 mΩ at VGS = 12 V, Tvj = 25°C - Optimized for fly-back topologies - 12 V / 0 V gate-source voltage patible with most fly-back controllers - Very low switching losses - Benchmark gate threshold voltage, VGS(th) = 4.5 V - Fully controllable dv/dt for EMI optimization - .XT interconnection technology for best-in-class thermal performance Potential applications - General purpose drives (GPD) - EV-Charging - Energy Storage Systems (ESS) - String inverter - Uninterruptible power supplies Product validation - Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 Description - gate 2 - drain 3 - source TO-247 HCC - 3Pin 2021-10-27 restricted Copyright © Infineon T Type IMWH170R450M1 Package PG-TO247-3-STD-NN4.8 Marking 170M1450 Datasheet .infineon. Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 2024-03-25 IMWH170R450...