Infineon Technologies 1EBN1001AE
The 1EBN1001AE is an IGBT / MOSFET Gate Driver Booster designed for automotive motor drives above 10kW. The 1EBN1001AE is based on high performance bipolar technology and aims at replacing buffer stages based on discrete devices. This makes this device suitable for most inverter systems in automotive applications.| Part No. | 1EBN1001AE |
|---|---|
| Datasheet | 1EBN1001AE Download |
| Manufacturer |  Infineon Technologies |
| Description | Single Channel Booster |
| Buy | Stock & Price |
DESCRIPTION
Ordering Code SP001002438 7 Package PG-DSO-14 Rev. 3.0, 2015-04-30 1.3 TargetAPPLICATIONS
● Inverters for automotive Hybrid Vehicles (HEV) and Electric Vehicles (EV).● High Voltage DC/DC converter.
● Industrial Drive. EiceDRIVER™ Boost 1EBN1001AE Product Definition Final Datasheet 8 Hardware
DESCRIPTION
Rev. 3.0, 2015-04-30 2 FunctionalDESCRIPTION
EiceDRIVER™ Boost 1EBN1001AE FunctionalDESCRIPTION
2.1 Introduction The 1EBN1001AE is an advanced bipolar single channel IGBT gate driver booster that can also be used for driving power MOS devices. The device has been developed in order to optimize the design of high performance safety relevant automotive systems. The turn-on and turn-off behavior of the IGBT is controlled via 2 pairs of pin: TONI and TOFFI which are connected to the gate driver, and TONO and TOFFO connected to the gate resistances of the IGBT. The structure of the output stage is basically that of an emitter-follower circuit, where the voltage at pin TONO (resp.
