1ED21271S65F Product details
This page provides the datasheet information for the 1ED21271S65F, a member of the 1ED2127S65F 650V high-side gate driver family.
Description
The 1ED21x7x family are high voltage, high current and high speed gate drivers for Si / SiC power MOSFET and IGBT.
Features
- Infineon thin-film-SOI-technology.
- Maximum blocking voltage +650 V.
- Output source/sink current +4 A/ -4 A.
- Maximum supply voltage of 25 V.
- Integrated ultra-fast, low RDS(ON) Bootstrap Diode.
- Negative VS transient immunity of 100 V.
- Detection of over current and under voltage supply.
- Multi-function RCIN/Fault/Enable (RFE) with
programmable fault clear time.
- Less than 100 ns propagation delay.
- DSO-8 package.
1ED21271S65F Datasheet
