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1ED2147S65F - 650V high-side gate driver

This page provides the datasheet information for the 1ED2147S65F, a member of the 1ED2127S65F 650V high-side gate driver family.

Product Overview

Infineon

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1ED2147S65F 650V high-side gate driver by Infineon - Datasheet Preview — Datasheet preview – 1ED2147S65F

Datasheet Details

Part number	1ED2147S65F
Manufacturer	Infineon
File Size	673.68 KB
Description	650V high-side gate driver
Datasheet	1ED2147S65F Datasheet
Additional preview pages of the 1ED2147S65F datasheet.

1ED2147S65F Product details

Description

The 1ED21x7x family are high voltage, high current and high speed gate drivers for Si / SiC power MOSFET and IGBT.

Features

Infineon thin-film-SOI-technology.
Maximum blocking voltage +650 V.
Output source/sink current +4 A/ -4 A.
Maximum supply voltage of 25 V.
Integrated ultra-fast, low RDS(ON) Bootstrap Diode.
Negative VS transient immunity of 100 V.
Detection of over current and under voltage supply.
Multi-function RCIN/Fault/Enable (RFE) with programmable fault clear time.
Less than 100 ns propagation delay.
DSO-8 package.

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Published: Apr 16, 2025 |