1ED2147S65F
Description
The 1ED21x7x family are high voltage, high current and high speed gate drivers for Si / SiC power MOSFET and IGBT.
Key Features
- Infineon thin-film-SOI-technology
- Maximum blocking voltage +650 V
- Output source/sink current +4 A/ -4 A
- Maximum supply voltage of 25 V
- Integrated ultra-fast, low RDS(ON) Bootstrap Diode
- Negative VS transient immunity of 100 V
- Detection of over current and under voltage supply
- Multi-function RCIN/Fault/Enable (RFE) with
- Less than 100 ns propagation delay
- DSO-8 package
