Datasheet4U Logo Datasheet4U.com

1ED2147S65F - 650V high-side gate driver

Download the 1ED2147S65F datasheet PDF. This datasheet also covers the 1ED2127S65F variant, as both devices belong to the same 650v high-side gate driver family and are provided as variant models within a single manufacturer datasheet.

General Description

The 1ED21x7x family are high voltage, high current and high speed gate drivers for Si / SiC power MOSFET and IGBT.

Key Features

  • Infineon thin-film-SOI-technology.
  • Maximum blocking voltage +650 V.
  • Output source/sink current +4 A/ -4 A.
  • Maximum supply voltage of 25 V.
  • Integrated ultra-fast, low RDS(ON) Bootstrap Diode.
  • Negative VS transient immunity of 100 V.
  • Detection of over current and under voltage supply.
  • Multi-function RCIN/Fault/Enable (RFE) with programmable fault clear time.
  • Less than 100 ns propagation delay.
  • DSO-8 package.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (1ED2127S65F-Infineon.pdf) that lists specifications for multiple related part numbers.

Other Datasheets by Infineon

Part Number Description
1ED21471S65F 650V high-side gate driver
1ED21271S65F 650V high-side gate driver
1ED2127S65F 650V high-side gate driver
1ED020I12-B2 Single channel isolated gate driver
1ED020I12-BT Single channel isolated gate driver
1ED020I12-F Single IGBT Driver
1ED020I12-F2 Single IGBT Driver
1ED020I12-FT Single IGBT Driver
1ED020I12FA Single IGBT Driver
1ED020I12FA2 Single IGBT Driver

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
1ED21x7x Family 1ED21x7x Family Datasheet 650 V high-side gate driver with over current protection (OCP), multi-function RCIN/Fault/Enable (RFE) and integrated bootstrap diode (BSD) Features • Infineon thin-film-SOI-technology • Maximum blocking voltage +650 V • Output source/sink current +4 A/ -4 A • Maximum supply voltage of 25 V • Integrated ultra-fast, low RDS(ON) Bootstrap Diode • Negative VS transient immunity of 100 V • Detection of over current and under voltage supply • Multi-function RCIN/Fault/Enable (RFE) with programmable fault clear time • Less than 100 ns propagation delay • DSO-8 package • RoHS compliant Product summary VS_OFFSET IO+/- (typ.) tON / tOFF (typ.) tR / tF (typ.) = 650 V max.