Infineon Technologies 1ED3141MU12F
The EiceDRIVER™ 1ED314xMx12x gate driver ICs are high-performance galvanically isolated single-channel gate drivers designed for driving IGBTs, MOSFETs and SiC MOSFETs. The gate driver ICs are available in a 150-mil, 8-pin package (1ED314xMU12F) and a 300-mil, 8-pin package (1ED314xMC12H).| Part No. | 1ED3141MU12F |
|---|---|
| Datasheet | 1ED3141MU12F Download |
| Manufacturer |  Infineon Technologies |
| Description | Single-channel 3kV (rms) isolated gate driver |
| Buy | Stock & Price |
FEATURES
● Single-channel galvanically isolated coreless transformer based gate driver● Separate outputs, output UVLO referenced to GND2 or adjustable output UVLO options
● For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs
● Up to 6.5 A typical peak output current
● 40 ns propagation delay with 7 ns part-to-part matching (skew)
● 35 V absolute maximum output supply voltage
● Very high (best-in-class) common-mode transient immunity CMTI > 300 kV/µs
● Active shutdown and short circuit clamping
● 150 mil DSO-8 and 300 mil LDSO-8 packages with CTI > 600
● 3.3 V and 5 V input supply voltage
● Suitable for operation at high ambient temperature and in fast switching applications
● UL 1577 certification VISO = 3.0 kV (rms) for 1 min (File E311313) for 1ED314xMU12F
● UL 1577 certification VISO = 5.7 kV (rms) for 1 min (File E311313), and IEC 60747-17 (VIORM = 1767 V) (planned) for 1ED314xMC12H Potential applications
● EV charging
● Energy storage systems
● Solar inverters...
