1ED3142MU12F Datasheet Single-channel 3kV (rms) isolated gate driver

Manufacturer: Infineon

Download the 1ED3142MU12F datasheet PDF. This datasheet also includes the 1ED3140MU12F variant, as both parts are published together in a single manufacturer document.

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1ED3142MU12F single-channel 3kv (rms) isolated gate driver by Infineon - Datasheet Preview — Note: The manufacturer provides a single datasheet file (1ED3140MU12F-Infineon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	1ED3142MU12F
Manufacturer	Infineon
File Size	2.05 MB
Description	Single-channel 3kV (rms) isolated gate driver
Datasheet	1ED3142MU12F Datasheet

General Description

The EiceDRIVER™ 1ED314xMx12x gate driver ICs are high-performance galvanically isolated single-channel gate drivers designed for driving IGBTs, MOSFETs and SiC MOSFETs.

The gate driver ICs are available in a 150-mil, 8-pin package (1ED314xMU12F) and a 300-mil, 8-pin package (1ED314xMC12H).

They provide a typical output current of up to 6.5 A.

Overview

EiceDRIVER™ 1ED314xMU12F & 1ED314xMC12H (1ED-X3 Compact) Datasheet Single-channel isolated gate driver.

Key Features

Single-channel galvanically isolated coreless transformer based gate driver.
Separate outputs, output UVLO referenced to GND2 or adjustable output UVLO options.
For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs.
Up to 6.5 A typical peak output current.
40 ns propagation delay with 7 ns part-to-part matching (skew).
35 V absolute maximum output supply voltage.
Very high (best-in-class) common-mode transient immu.

More Datasheets from Infineon

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1ED3140MU12F	Single-channel 3kV (rms) isolated gate driver
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1ED3121MU12H	Single-channel 5.7kV (rms) isolated gate driver
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1ED3123MU12H	Single-channel 5.7kV (rms) isolated gate driver