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1EDI20I12MH Datasheet Single Channel IGBT Gate Driver

Manufacturer: Infineon

Overview: 1EDIxxI12MH EiceDRIVER™ 1EDI Compact Single channel IGBT gate driver IC with clamp in wide body.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

Description The 1EDIxxI12MH are galvanically isolated single channel IGBT driver in a PG-DSO-8-59 package that provide output currents up to 3 A and an integrated active Miller clamp circuit with the same current rating to protect against parasitic turn on.

The input logic pins operate on a wide input voltage range from 3 V to 15 V using scaled CMOS threshold levels to support even 3.3 V microcontrollers.

Data transfer across the isolation barrier is realized by the coreless transformer technology.

Key Features

  • Single channel isolated gate driver.
  • For 600 V/650 V/1200 V IGBTs, MOSFETs, and SiC MOSFETs.
  • Up to 6 A typical peak current at rail-to-rail output.
  • Active Miller clamp.
  • Galvanically isolated coreless transformer driver.
  • Wide input voltage operating range.
  • Suitable for operation at high ambient temperature and in fast switching.

More Datasheets from Infineon

Part Number Description
1EDI20I12MF Single Channel IGBT Gate Driver
1EDI20I12AF Single channel isolated gate driver
1EDI20I12AH Single channel IGBT gate driver
1EDI20I12SV High voltage gate driver
1EDI2001AS High Voltage IGBT Driver
1EDI2002AS High Voltage IGBT Driver
1EDI2004AS High Voltage IGBT Driver
1EDI20H12AH Single channel IGBT gate driver
1EDI20N12AF Single channel isolated gate driver
1EDI20N12AF Single Channel MOSFET and GaN HEMT Gate Driver

1EDI20I12MH Distributor