Datasheet4U Logo Datasheet4U.com

1EDI3051AS - Single channel isolated IGBT/SiC-MOSFET driver

Description

.

.

.

.

Features

  • Single channel isolated IGBT/SiC driver using coreless transformer technology.
  • For IGBTs/SiC-MOSFETs up to 1200 V.
  • Integrated SPI.
  • CMTI up to 150 V/ns up to 1000 V.
  • Reinforced isolation 8 kV peak according to DIN EN IEC 60747-17 (VDE 0884-17):2021-10.
  • 5.7 kVrms insulation according to UL 1577.
  • Integrated booster with up to 20 A peak current rail-to-rail split output.
  • Dual monitoring/clamping for parallel power device drivin.

📥 Download Datasheet

Datasheet preview – 1EDI3051AS

Datasheet Details

Part number 1EDI3051AS
Manufacturer Infineon
File Size 1.69 MB
Description Single channel isolated IGBT/SiC-MOSFET driver
Datasheet download datasheet 1EDI3051AS Datasheet
Additional preview pages of the 1EDI3051AS datasheet.

📁 Similar Datasheet

Other Datasheets by Infineon

Full PDF Text Transcription

Click to expand full text
EiceDRIVER™ gate driver 1EDI3051AS Single channel isolated IGBT/SiC-MOSFET driver Features • Single channel isolated IGBT/SiC driver using coreless transformer technology • For IGBTs/SiC-MOSFETs up to 1200 V • Integrated SPI • CMTI up to 150 V/ns up to 1000 V • Reinforced isolation 8 kV peak according to DIN EN IEC 60747-17 (VDE 0884-17):2021-10 • 5.
Published: |