Datasheet Summary
EiceDRIVER™ gate driver 1EDI3051AS
Single channel isolated IGBT/SiC-MOSFET driver
Features
- Single channel isolated IGBT/SiC driver using coreless transformer technology
- For IGBTs/SiC-MOSFETs up to 1200 V
- Integrated SPI
- CMTI up to 150 V/ns up to 1000 V
- Reinforced isolation 8 kV peak according to DIN EN IEC 60747-17 (VDE
0884-17):2021-10
- 5.7 kVrms insulation according to UL 1577
- Integrated booster with up to 20 A peak current rail-to-rail split output
- Dual monitoring/clamping for parallel power device driving
- Integrated flyback controller
- Safety inputs for primary ASC trigger and PWM control
- Propagation delay 60 ns typical
- Internal and external active Miller clamp...