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1EDI30I12MH

Manufacturer: Infineon

1EDI30I12MH datasheet by Infineon.

This datasheet includes multiple variants, all published together in a single manufacturer document.

1EDI30I12MH datasheet preview

1EDI30I12MH Datasheet Details

Part number 1EDI30I12MH
Datasheet 1EDI30I12MH 1EDI10I12MH Datasheet (PDF)
File Size 501.59 KB
Manufacturer Infineon
Description Single channel IGBT gate driver
1EDI30I12MH page 2 1EDI30I12MH page 3

1EDI30I12MH Overview

Description The 1EDIxxI12MH are galvanically isolated single channel IGBT driver in a PG-DSO-8-59 package that provide output currents up to 3 A and an integrated active Miller clamp circuit with the same current rating to protect against parasitic turn on. The input logic pins operate on a wide input voltage range from 3 V to 15 V using scaled CMOS threshold levels to support even 3.3 V microcontrollers. Data...

1EDI30I12MH Key Features

  • Single channel isolated gate driver
  • For 600 V/650 V/1200 V IGBTs, MOSFETs, and SiC MOSFETs
  • Up to 6 A typical peak current at rail-to-rail output
  • Active Miller clamp
  • Galvanically isolated coreless transformer driver
  • Wide input voltage operating range
  • Suitable for operation at high ambient temperature and in fast switching
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1EDI3033AS Single channel isolated SiC-MOSFET driver
1EDI3035AS Single channel isolated SiC-MOSFET driver
1EDI3050AS Single channel isolated IGBT/SiC-MOSFET driver
1EDI3051AS Single channel isolated IGBT/SiC-MOSFET driver
1EDI30J12CP Single JFET Driver
1EDI05I12AF Single channel isolated gate driver
1EDI05I12AH Single channel IGBT gate driver

1EDI30I12MH Distributor

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