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2ED2110S06M - 650V high-side and low-side gate driver

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Infineon

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2ED2110S06M 650V high-side and low-side gate driver by Infineon - Datasheet Preview — Datasheet preview – 2ED2110S06M

Datasheet Details

Part number	2ED2110S06M
Manufacturer	Infineon
File Size	1.28 MB
Description	650V high-side and low-side gate driver
Datasheet	2ED2110S06M Datasheet
Additional preview pages of the 2ED2110S06M datasheet.

Product details

Description

The 2ED2110S06M is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.

Features

Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology.
Negative VS transient immunity of 100 V.
Floating channel designed for bootstrap operation.
Operating voltages (VS node) up to + 650 V.
Maximum bootstrap voltage (VB node) of + 675 V.
Integrated ultra-fast, low resistance bootstrap diode.
Logic operational up to.
11 V on VS Pin.
Negative voltage tolerance on inputs of.
5 V.
Independent.

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Published: May 21, 2025 |