2ED2110S06M Description
The 2ED2110S06M is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Based on Infineon’s SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages of up to - 11 VDC on VS pin (VCC = 15 V) on transient voltages. There are not any parasitic thyristor structures present in the...
2ED2110S06M Key Features
- Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology
- Negative VS transient immunity of 100 V
- Floating channel designed for bootstrap operation
- Operating voltages (VS node) up to + 650 V
- Maximum bootstrap voltage (VB node) of + 675 V
- Integrated ultra-fast, low resistance bootstrap diode
- Logic operational up to -11 V on VS Pin
- Negative voltage tolerance on inputs of -5 V
- Independent under voltage lockout for both channels
- Schmitt trigger inputs with hysteresis