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2ED2110S06M - 650V high-side and low-side gate driver

General Description

The 2ED2110S06M is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.

Key Features

  • Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology.
  • Negative VS transient immunity of 100 V.
  • Floating channel designed for bootstrap operation.
  • Operating voltages (VS node) up to + 650 V.
  • Maximum bootstrap voltage (VB node) of + 675 V.
  • Integrated ultra-fast, low resistance bootstrap diode.
  • Logic operational up to.
  • 11 V on VS Pin.
  • Negative voltage tolerance on inputs of.
  • 5 V.
  • Independent.

📥 Download Datasheet

Datasheet Details

Part number 2ED2110S06M
Manufacturer Infineon
File Size 1.28 MB
Description 650V high-side and low-side gate driver
Datasheet download datasheet 2ED2110S06M Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2ED2181 (4) S06F 2ED2110S06M 650 V high-side and low-side gate driver with integrated bootstrap diode Features • Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology • Negative VS transient immunity of 100 V • Floating channel designed for bootstrap operation • Operating voltages (VS node) up to + 650 V • Maximum bootstrap voltage (VB node) of + 675 V • Integrated ultra-fast, low resistance bootstrap diode • Logic operational up to –11 V on VS Pin • Negative voltage tolerance on inputs of –5 V • Independent under voltage lockout for both channels • Schmitt trigger inputs with hysteresis • 3.